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 RB521S30_1 ? NXP B.V. 2009. All rights reserved. Product data sheet Rev. 01 — 6 October 2009 7 of 12 NXP Semiconductors RB521S30 200 mA low VF MEGA Schottky barrier recti?er 8. Test information FR4 PCB, mounting pad for cathode 1 cm2 Tj = 150 °C (1) δ = 1; DC (2) δ = 0.5; f = 20 kHz (3) δ = 0.2; f = 20 kHz (4) δ = 0.1; f = 20 kHz Tj = 150 °C (1) δ = 1; DC (2) δ = 0.5; f = 20 kHz (3) δ = 0.2; f = 20 kHz (4) δ = 0.1; f = 20 kHz Fig 9. Average forward current as a function of ambient temperature; typical values Fig 10. Average forward current as a function of solder point temperature; typical values Tamb ( °C) 0 50 100 150 17525 75 125 006aab718 0.1 0.2 0.3 IF(AV) (A) 0.0 (1) (2) (3) (4) Tsp ( °C) 0 50 100 150 17525 75 125 006aab719 0.1 0.2 0.3 IF(AV) (A) 0.0 (1) (2) (3) (4) (1) IR =1mA Input signal: reverse pulse rise time tr = 0.6 ns; reverse voltage pulse duration tp = 100 ns; duty cycle δ = 0.05 Oscilloscope: rise time tr = 0.35 ns Fig 11. Reverse recovery time test circuit and waveforms trr (1) + I F t output signal tr tp t 10 % 90 % VR input signal V = VR + IF ′ RS RS = 50 W IF D.U.T. Ri = 50 W SAMPLING OSCILLOSCOPE mga881 |